Chemical Name
Hafnium Oxide
Chemical Formula
HfO2
Purity
99.99%
Composition
(Zr<0.32 wt%)
Size
18 mm dia x 6 mm th.
EINECS Number
235-013-2
Quantity Available
kg
CAS Number
12055-23-1
Status
Product ID
TPHFO218D6T4N-6
Hazmat
Not hazardous for transportation
Catalog Number
17814
Description
White
Comments
low Zr, ultra-high purity, high LIDT, creamy white
Hafnium oxide sputtering targets are used to deposit high-k dielectric thin films for advanced gate insulators in microelectronic devices.
Used as a high-refractive index material in multilayer optical coatings for UV and IR applications due to its wide bandgap and high damage threshold.
Utilized as a source material for physical vapor deposition to create protective and functional coatings on optical components.
Serves as a critical high-k gate dielectric material to replace silicon dioxide, allowing for further miniaturization of transistors.
Due to its extremely high melting point and chemical stability, it is used in specialized refractory applications and high-temperature ceramics.
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